Method of fabricating a semiconductor memory device having a branching capacitor

ABSTRACT

A method for fabricating a semiconductor memory device with a tree-type capacitor having increased area for reliable storage of electrical charges representative of data thereon. The tree-type capacitor includes a storage electrode having a trunk-like conductive layer coupled to at least one branch-like conductive layer, which can be structured in various shapes that allow the branch-Like conductive layer to have increased surface area. The branch-like conductive layers are formed by successively depositing at least one insulating layer and at least one conductive layer over the substrate such that the conductive layer makes a series of twists and turns, defining the shape of the branch-like conductive layer. The surface of the built-up wafer is removed until the conductive layer is divided into a number of segments. A contact hole is formed through the conductive layer to a drain/source region of a transistor in the device, and is filled with a conductive layer, forming the trunk-like layer. The insulating material is wet-etched away, leaving the conductive segment attached to the truck-like layer as a branch-like conductive layer. A dielectric layer is formed over exposed surfaces of the trunk-like conductive layer and the branch-like conductive layer, and a further conductive layer is formed overlaying the dielectric layer to serve as an opposing electrode of the tree-type capacitor.

This is a divisional of U.S. patent application Ser. No. 08/706,705,filed on Sep. 6, 1996, now U.S. Pat. No. 5,863,821, which issued on Jan.26, 1999.

BACKGROUND OF THE INVENTION

1. Field of the Invention

This invention relates in general to semiconductor memory devices, andmore particularly to a structure of a dynamic random access memory(DRAM) cell substantially composed of a transfer transistor and a chargestorage capacitor.

2. Description of the Related Art

FIG. 1 is a circuit diagram of a memory cell for a DRAM device. As shownin the drawing, a DRAM cell is substantially composed of a transfertransistor T and a charge storage capacitor C. A source of the transfertransistor T is connected to a corresponding bit line BL, and a drainthereof is connected to a storage electrode 6 of the charge storagecapacitor C. A gate of the transfer transistor T is connected to acorresponding word line WL. An opposing electrode 8 of the capacitor Cis connected to a constant power source. A dielectric film 7 is providedbetween the storage electrode 6 and the opposing electrode 8.

In the DRAM manufacturing process, a two-dimensional capacitor called aplanar type capacitor is mainly used for a conventional DRAM having astorage capacity less than 1M (mega=million) bits. In the case of a DRAMhaving a memory cell using a planar type capacitor, electric charges arestored on the main surface of a semiconductor substrate, so that themain surface is required to have a large area. This type of a memorycell is therefore not suited to a DRAM having a high degree ofintegration. For a high integration DRAM such as a DRAM with more than4M bits of memory, a three-dimensional capacitor, called a stacked-typeor a trench-type capacitor, has been introduced.

With the stacked-type or trench-type capacitors, it has been madepossible to obtain a larger memory in a similar volume. However, torealize a semiconductor device of an even higher degree of integration,such as a very-large-scale integration (VLSI) circuit having a capacityof 64M bits, a capacitor of such a simple three-dimensional structure asthe conventional stacked-type or trench-type, turns out to beinsufficient.

One solution for improving the capacitance of a capacitor is to use theso-called fin-type stacked capacitor, which is proposed in Ema et al.,"3-Dimensional tacked Capacitor Cell for 16M and 64M DRAMs",International Electron Devices Meeting, pp. 592-595, Dec. 1988. Thefin-type stacked capacitor includes electrodes and dielectric filmswhich extend in a fin shape in a plurality of stacked layers. DRAMshaving the fin-type stacked capacitor are also disclosed in U.S. Pat.Nos. 5,071,783 (Taguchi et al.), 5,126,810 (Gotou); 5,196,365 (Gotou);and 5,206,787 (Fujioka).

Another solution for improving the capacitance of a capacitor is to usethe so-called cylindrical-type stacked capacitor, which is proposed inWakamiya et al., "Novel Stacked Capacitor Cell for 64-Mb DRAM", 1989Symposium on VLSI Technology Digest of Technical Papers, pp. 69-70. Thecylindrical-type stacked capacitor includes electrodes and dielectricfilms which extend in a cylindrical shape to increase the surface areasof the electrodes. A DRAM having the cylindrical-type stacked capacitoralso is disclosed in the U.S. Pat. No. 5,077,688 (Kumanoya et al.).

With the trend toward increased integration density, the size of theDRAM cell in a plane (the area it occupies in a plane) must be furtherreduced. Generally, a reduction in the size of the cell leads to areduction in charge storage capacity (capacitance). Additionally, as thecapacitance is reduced, the likelihood of soft errors arising from theincidence of α-rays is increased. Therefore, there is still a need inthis art to design a new structure of a storage capacitor which canachieve the same capacitance, while occupying a smaller area in a plane,and a suitable method of fabricating the structure.

SUMMARY OF THE INVENTION

It is therefore an object of the invention to provide a method forfabricating a semiconductor memory device which is structured with atree-type capacitor that allows an increased area for charge storage.

In accordance with the foregoing and other objects of the invention, anew and improved method for fabricating a semiconductor memory deviceare provided.

The invention provides a method for fabricating a semiconductor memorydevice. The semiconductor memory device includes a substrate, a transfertransistor having source/drain regions, formed on the substrate, and acharge storage capacitor electrically coupled to one of the source/drainregions. According to the method, a first insulating layer is firstformed over the substrate, such that it covers the transfer transistor.An insulating pillar is then formed over the first insulating layer, theinsulating pillar defining recess areas on either side thereof. A firstfilm of insulating material and a second film of conductive material arenext alternately formed over the first insulating layer in a recess areaand over the insulating pillar. A selected part of the second film thatlies above the insulating pillar is then removed and a first conductivelayer is formed which penetrates at least through the second film, thefirst film, and the first insulating layer so as to be electricallycoupled to one of the source/drain regions The first conductive layerand the second film in combination thus form a storage electrode of thecharge storage capacitor. The insulating pillar and the first film arethen removed. A dielectric layer is formed over exposed surfaces of thefirst conductive layer and the second film, and a second conductivelayer is formed over the dielectric layer. The second conductive layerthus functions as an opposing electrode of the charge storage capacitor.

A semiconductor memory device according to the invention is thereforeformed having a tree-type capacitor of increased area for reliablestorage thereon of electrical charges representative of data. By varyingthe number of conducting layers formed, interleaved with insulatinglayers, during fabrication, the total surface area of the capacitorelectrodes can be controlled. The size, shape, and placement of theinsulating pillar and the size, shape, and construction of the secondconductive layer may also be varied to change the shape of the tree-typecapacitor in order to satisfy particular design needs.

BRIEF DESCRIPTION OF DRAWINGS

Other objects, features, and advantages of the invention will becomeapparent from the following detailed description of the preferred butnon-limiting embodiments. The description is made with reference to theaccompanying drawings in which:

FIG. 1 is a circuit diagram of a memory cell of a DRAM device,

FIGS. 2A through 2G are cross-sectional views for explaining a firstembodiment of a semiconductor memory cell having a tree-type capacitoraccording to the invention, and a method for fabricating the sameaccording to the invention;

FIGS. 3A through 3D are cross-sectional views for explaining a secondembodiment of a semiconductor memory cell having a tree-type capacitoraccording to the invention and a method for fabricating the sameaccording to the invention;

FIGS. 4A and 4B are cross-sectional views for explaining a thirdembodiment of a semiconductor memory cell having a tree-type capacitoraccording to the invention and a method for fabricating the sameaccording to the invention;

FIGS. 5A through 5D are cross-sectional views for explaining a fourthembodiment of a semiconductor memory cell having a tree-type capacitoraccording to the invention and a method for fabricating the sameaccording to the invention;

FIGS. 6A and 6B are cross-sectional views for explaining a fifthembodiment of a semiconductor memory cell having a tree-type capacitoraccording to the invention and a method for fabricating the sameaccording to the invention;

FIGS. 7A and 7B are cross-sectional views for explaining a sixthembodiment of a semiconductor memory cell having a tree-type capacitoraccording to the invention and a method for fabricating the sameaccording to the invention;

FIGS. 8A through 8F are cross-sectional views for explaining a seventhembodiment of a semiconductor memory cell having a tree-type capacitoraccording to the invention and a method for fabricating the sameaccording to the invention;

FIGS. 9A through 9D are cross-sectional views for explaining an eighthembodiment of a semiconductor memory cell having a tree-type capacitoraccording to the invention and a method for fabricating the sameaccording to the invention; and

FIGS. 10A through 10D are cross-sectional views for explaining a ninthembodiment of a semiconductor memory cell having a tree-type capacitoraccording to the invention and a method for fabricating the sameaccording to the invention.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS First PreferredEmbodiment

A description will be given of a first embodiment of a semiconductormemory device having a tree-type charge storage capacitor according tothe invention, by referring to FIGS. 2A through 2G. This embodiment ofthe semiconductor memory device can be produced by a first preferredmethod for fabricating a semiconductor memory device according to theinvention.

Referring to FIG. 2A, a surface of a silicon substrate 10 is subjectedto thermal oxidation by the LOCOS (local oxidation of silicon)technique, and thereby a field oxidation film 12 having a thickness ofapproximately 3000 Å (angstroms), for example, is formed. Next, a gateoxidation film 14 having a thickness of approximately 150 Å, forexample, is formed by subjecting the silicon substrate 10 to the thermaloxidation process. Then a polysilicon film having a thickness ofapproximately 2000 Å, for example, is deposited on the entire surface ofthe silicon substrate 10 by CVD (chemical vapor deposition) or LPCVD(low pressure CVD). In order to obtain a polysilicon film of lowresistance, suitable impurities such as phosphorus ions, for example,are diffused into the polysilicon film. Preferably, a refractory metallayer is deposited over the polysilicon film, and then an annealingprocess is carried out to form polycide, so that the film's resistanceis further decreased. The refractory metal may be tungsten (W), and itsthickness is, for example, approximately 2000 Å. Thereafter, thepolycide is subjected to a patterning process to form gate electrodes(or word lines) WL1 through WL4, as shown in FIG. 2A. Then, arsenicions, for example, are diffused into the silicon substrate 10 at anenergy of 70 KeV to provide an impurity concentration of approximately1×10¹⁵ atoms/cm², for example. In this step, the word lines WL1 throughWL4 are used as mask films. Thereby, drain regions 16a and 16b andsource regions 18a and 18b are formed in the silicon substrate 10.

Referring next to FIG. 2B, in the subsequent step the CVD method is usedto deposit a planarization insulating layer 20 of, for example,borophosphosilicate glass (BPSG), to a thickness of approximately 7,000Å, for example. Then the same method is used to form an etchingprotection layer 22, which can be, for example, a silicon nitride layer,having a thickness of approximately 1,000 Å, for example. After that, athick insulating layer of, for example silicon dioxide, is depositedover the wafer to a thickness of approximately 7,000 Å, for example.Conventional photolithographic and etching processes are then used todefine an insulating pillar 24 bounded by recesses 23. Although FIG. 2Bshows the insulating pillar 24 in a number of separate locations, theinsulating pillar 24 is actually an integrated body, which is apparentwhen viewed from above.

Referring next to FIG. 2C, in the subsequent step the CVD method is usedsuccessively to form a first insulating layer 26, a polysilicon layer28, and a second insulating layer 30. The first and second insulatinglayers 26, 30 are preferably formed of silicon oxide. The firstinsulating layer 26 and the polysilicon layer 28 are each deposited to athickness of approximately 1,000 Å, for example, and the secondinsulating layer 30 is deposited to a thickness of approximately 7,000Å, for example. Arsenic (As) ions can be diffused into the polysiliconlayer 28 so as to increase its conductivity.

Referring next to FIG. 2D, in the subsequent step, chemical mechanicalpolishing (CMP) is performed on the surface of the wafer of FIG. 2Cuntil an upper part of the polysilicon layer 28 is polished away. Theremaining part of the polysilicon layer 28 includes a number of separatesections as designated by the numerals 28a, 28b shown in FIG. 2D.

Referring next to FIG. 2E, conventional photolithographic and etchingprocesses are then carried out to selectively etch, in sequence, theinsulating layer 30, polysilicon layer sections 28a and 28b, insulatinglayer 26, etching protection layer 22, insulating layer 20, and gateoxidation film 14. As a result, storage electrode contact holes 32a and32b are formed. The storage electrode contact holes 32a and 32b extendrespectively from a top surface of the insulating layer 30 to a topsurface of the drain regions 16a and 16b. A polysilicon film is thendeposited and etched back to refill the storage electrode contact holes32a and 32b with polysilicon layers 34a and 34b.

Referring next to FIG. 2F, in the subsequent step wet etching isperformed on the wafer with the etching protection layer 22 as the etchend point, so as to remove the insulating layers 26, 30 and theinsulating pillar 24. The remaining tree trunk-like polysilicon layers34a, 34b and the branch-like polysilicon layers 28a, 28b, in combinationform a tree-like storage electrode for the capacitor of the DRAM. Thetrunk-like polysilicon layers 34a, 34b are respectively electricallycoupled to the drain regions 16a and 16b of the transfer transistors inthe DRAM. The branch-like polysilicon layers 28a, 28b are eachsubstantially L-shaped in cross section and have the substantiallyhorizontal sections in electrical contact with the trunk-likepolysilicon layers 34a, 34b. With this particular shape, the storageelectrodes are hereinafter in this specification referred to as"tree-like storage electrodes", and the capacitors thus made arereferred to as "tree-type capacitors".

Referring next to FIG. 2G, in the subsequent step dielectric films 36a,36b are respectively formed over the tree-like storage electrode (34a,28a) and the tree-like storage electrode (34b, 28b). The dielectricfilms 36a, 36b can be formed of, for example, silicon dioxide, siliconnitride, NO (silicon nitride/silicon dioxide), ONO (silicondioxide/silicon nitride/silicon dioxide), or the like. Next, an opposingelectrode 38 of polysilicon, that opposes the storage electrodes (34a,28a) and (34b and 28b), is formed over the dielectric films 36a, 36b.The process for forming the opposing electrode 38 includes a first stepof depositing a polysilicon layer by the CVD method to a thickness of,for example, approximately 1,000 Å, a second step of diffusing N-typeimpurities into the polysilicon layer so as to increase the conductivitythereof, and a final step of using conventional photolithographic andetching processes to etch away selected parts of the polysilicon layer.The fabrication of the tree-type capacitors in the DRAM is thencomplete.

To complete the fabrication of the DRAM chip, the subsequent stepsinclude fabricating bit lines, bonding pads, interconnections,passivations, and packaging. These steps involve only conventionaltechniques and are not within the spirit and scope of the invention, sothat a detailed description thereof will not be provided herein.

Second Preferred Embodiment

In the foregoing first embodiment, the disclosed tree-type capacitor hasonly a single branch electrode. However, the number of branches is notlimited to one and can be two or more. In the following, a secondembodiment of the tree-type capacitor, which includes two branches ofelectrodes, is described with reference to FIGS. 3A through 3D. Thetree-type capacitor of the second embodiment is based on the waferstructure of FIG. 2B. Elements in FIGS. 3A through 3D that are identicalto those in FIG. 2B are labeled with the same numerals.

Referring to FIG. 3A together with FIG. 2B, the CVD method is used tosuccessively form alternate layers of insulation and polysilicon,including a first insulating layer 40, a first polysilicon layer 42, asecond insulating layer 44, a second polysilicon layer 46, and a thirdinsulating layer 48. The insulating layers 40, 44, 48 are formedpreferably of, for example, silicon oxide. The insulating layers 40, 44and the polysilicon layers 42, 46 are each deposited to a thickness ofapproximately 1,000 Å, for example, and the insulating layer 48 isdeposited to a thickness of approximately 7,000 Å, for example. Thepolysilicon layers 42, 46 can be diffused with arsenic (As) ions so asto increase the conductivity thereof.

Referring next to FIG. 3B, in the subsequent step the CMP technique isapplied to the surface of the wafer shown in FIG. 3A, so as to polishaway an upper part of the polysilicon layers 42, 46. The remaining partof the polysilicon layers 42, 46 includes a number of separate sectionsdesignated by the numerals 42a, 46a, and 42b, 46b.

Referring next to FIG. 3C, in the subsequent step conventionalphotolithographic and etching processes are used to form storageelectrode contact holes which extend from the top surface of theinsulating layer 48 (see FIG. 3B) to the surface of the drain regions16a and 16b. The storage electrode contact holes are then refilled withpolysilicon layers 50a, 50b by first using the CVD method to deposit apolysilicon layer, and then etching back part of the polysilicon layer.Subsequently, wet etching is performed on the wafer, with the etchingprotection layer 22 as the etch end point, so as to remove theinsulating layers 40, 44, 48 and the insulating pillar 24. The remainingtrunk-like polysilicon layers 50a, 5Ob and the branch-like polysiliconlayers 42a, 46b and 42b, 46b in combination form two tree-like storageelectrodes. The trunk-Like polysilicon layers 50a, 50b are respectivelyelectrically coupled to the drain regions 16a and 16b of the transfertransistors in the DRAM. The branch-like polysilicon layers 42a, 46a and42b, 46b are each substantially L-shaped in cross section, and havesubstantially horizontal sections in contact with the trunk-likepolysilicon layers 50a, 50b.

Referring next to FIG. 3D, in the subsequent step dielectric films 52a,52b are respectively formed on the tree-like storage electrodes (50a,46a, 42a) and (50b, 46b, 42b). Next, an opposing polysilicon electrode54 is formed over the dielectric films 52a, 52b. The process for formingthe opposing electrode 54 includes a first step of depositing apolysilicon layer by the CVD method, a second step of diffusing N-typeimpurities into the polysilicon layer so as to increase the conductivitythereof, and a final step of using conventional photolithographic andetching processes to etch away selected part of the polysilicon layer.After that, the fabrication for the tree-type capacitors in the DRAM iscomplete.

Third Preferred Embodiment

In the foregoing first and second embodiments, the bottom-most layer ofthe branch-like part of the tree-like storage electrode is separatedfrom the etching protection layer 22. However, the invention is notlimited to such a structure. In the following, a third embodiment of theinvention in which the bottom-most layer of the branch-like part of eachtree-like storage electrode is in contact with the etching protectionlayer 22 is described, with reference to FIGS. 4A and 4B.

The tree-type capacitors of the third embodiment are also based on thestructure of FIG. 2B. Elements in FIGS. 4A through 4D that are identicalto those in FIG. 2B are labeled with the same numerals.

Referring first to FIG. 4A together with FIG. 2B, the CVD method is usedsuccessively to form alternate layers of insulation and polysiliconincluding a first polysilicon layer 60, a first insulating layer 62, asecond polysilicon layer 64, and a second insulating layer 66.

Referring next to FIG. 4B, in the subsequent step the CMP technique isapplied to the surface of the wafer shown in FIG. 4A, so as to polishaway an upper part of the polysilicon layers 60, 64. The remaining partsof the polysilicon layers 60, 64 include a number of separate sectionsdesignated by the numerals 60a, 64a, and 60b, 64b. Next, conventionalphotolithographic and etching processes are used to form storageelectrode contact holes. The storage electrode contact holes are thenrefilled with polysilicon layers 68a, 68b. After that, wet etching isperformed on the wafer, with the etching protection layer 22 as the etchend point, so as to remove the insulating layers 62, 66.

The remaining trunk-like polysilicon layers 68a, 68b and the branch-likepolysilicon layers 60a, 64b and 60b, 64b in combination form twotree-like storage electrodes. The trunk-like polysilicon layers 68a, 68bare respectively electrically coupled to the drain regions 16a and 16bof the transfer transistor in the DRAM. The branch-like polysiliconlayers 60a, 64a and 60b, 64b are each substantially L-shaped in crosssection, and have substantially horizontal sections in contact with thetrunk-like polysilicon layers 68a, 68b. In this embodiment, thebranch-like polysilicon layers 60a, 60b of the tree-like storageelectrodes are in contact with the etching protection layer 22. Adielectric film and opposing polysilicon electrode may now be formed asdescribed previously for the first, second and third embodiments. Afterthat, the fabrication for the tree-type capacitors in the DRAM iscomplete.

Fourth Preferred Embodiment

In the foregoing three embodiments, the trunk-like part of the tree-likestorage electrode of each tree-type capacitor is an integrally formedsemiconductor element. However, the invention is not limited to such astructure. In the following, a fourth embodiment, in which thetrunk-like part of each tree-like storage electrode is composed of aplurality of semiconductor elements, is described, with reference toFIGS. 5A and 5D.

The tree-type capacitor of the fourth embodiment is also based on thestructure of FIG. 2A. Elements in FIGS. 5A through 5D that are identicalto those in FIG. 2A are labeled with the same numerals.

Referring first to FIG. 5A together with FIG. 2A, the CVD method is usedto deposit a planarization insulating layer 70 over the wafer of, forexample, BPSG. Then the same method is used to deposit an etchingprotection layer 72 of, for example, silicon nitride. After that,conventional photolithographic and etching processes are used to etchselected parts of the etching protection layer 72 and the planarizationinsulating layer 70, so as to form storage electrode contact holes 76a,76b which extend from the top surface of the etching protection layer 72to the top surface of the drain regions 16a and 16b. Next, the CVDmethod is used to deposit over the wafer a polysilicon layer which fillsthe storage electrode contact holes 76a, 76b. The polysilicon layer canbe diffused with impurities so as to increase the conductivity thereofConventional photolithographic and etching processes then are used todefine T-shaped elements 74a, 74b, to form respective bottom parts ofcapacitor charge storage electrodes for memory cells in the DRAM.

Referring next to FIG. 5B, in the subsequent step a thick insulatinglayer of, for example, silicon dioxide, is deposited over the wafer.Then, conventional photolithographic and etching processes are used toetch away selected parts of the insulating layer, so as to forminsulating pillars 78. Next, the CVD method is used successively to forma first insulating layer 80, a polysilicon layer 82, and a secondinsulating layer 84.

Referring next to FIG. 5C, in the subsequent step the CMP technique isapplied to the surface of the wafer shown in FIG. 5B, so as to polishaway an upper part of the polysilicon layer 82. The remaining part ofthe polysilicon layer 82 includes a number of separate sectionsdesignated by the numerals 82a, 82a.

Referring next to FIG. 5D, in the subsequent step conventionalphotolithographic and etching processes are used to successively etchaway selected parts of the second insulating layer 84, polysiliconlayers 82a, 82b, and the first insulating layer 80, so as to formcontact holes which extend from the top surface of the insulating layer84 to the top surface of the T-shaped elements 74a, 74b of the tree-likestorage electrodes. Then, the contact holes are refilled withpolysilicon so as to form upper parts 86a, 86b of the tree-like storageelectrodes. The process for refilling the polysilicon into the contactholes includes a first step of depositing a polysilicon layer by the CVDmethod, and a second step of etching back the same. After that, wetetching is performed on the wafer, with the etching protection layer 72as the etch end point, so as to remove the insulating layers 84, 80 andthe insulating pillar 78. This completes the fabrication of the storageelectrodes of the tree-type capacitors in the DRAM. The embodimentdiffers from that of FIG. 2F in that the storage electrodes each includein addition a substantially horizontal section extended from theT-shaped elements, 74a, 74b on the bottom. A dielectric film andopposing polysilicon electrode may now be formed as described previouslyfor the first, second and third embodiments. After that, the fabricationfor the tree-type capacitors in the DRAM is complete.

Fifth Preferred Embodiment

In the foregoing four embodiments, the trunk-like part of the tree-likestorage electrode is a solid semiconductor element. However, theinvention is not limited to such a structure. The following descriptiondiscloses a fifth embodiment with reference to FIGS. 6A and 6B, in whichthe trunk-like part of each tree-like storage electrode is hollow.

The tree-type capacitor of the fifth embodiment is based on thestructure of FIG. 2D. Elements in FIGS. 6A and 6B that are identical tothose in FIG. 2D are labeled with the same numerals.

Referring first to FIG. 6A together with FIG. 2D, after the fabricationhas reached the stage shown in FIG. 2D, conventional photolithographicand etching processes are used to etch away selected parts of theinsulating layer 30, the branch-like polysilicon layer 28a, 28b, theinsulating layer 26, the etching protection layer 22, the planarizationinsulating layer 20, and the gate oxidation film 14, so as to formstorage electrode contact holes 87a, 87b which extend from the topsurface of the insulating layer 30 to the top surfaces of the drainregions 16a and 16b. Next, the CVD method is used to deposit apolysilicon layer in such a manner that the polysilicon layer is formedonly on the inner walls of the storage electrode contact holes 87a, 87b,and do not fill up the holes. After that, conventional photolithographicand etching processes are used to define trunk-like polysilicon layers88a, 88b for the respective storage electrodes of the memory cells inthe DRAM. As illustrated in FIG. 6A, the trunk-like polysilicon layers88a, 88b are each substantially U-shaped in cross section, whichprovides an increased area on which the storage electrodes can storelarge amounts of electric charge.

Referring next to FIG. 6B, in the subsequent step wet etching isperformed on the wafer, with the etching protection layer 22 as the etchend point, so as to remove the insulating layers 30, 26 and theinsulating pillar 24. This completes the fabrication of the storageelectrodes of the tree-type capacitors in the DRAM. The embodimentdiffers from that of FIG. 2F in that the trunk-like parts of the storageelectrodes, namely the trunk-like polysilicon layers 88a, 88b, arehollow and have U-shaped cross sections, which provide the storageelectrodes with an increased surface area. A dielectric film andopposing polysilicon electrode may now be formed as described previouslyfor the first, second and third embodiments. After that, the fabricationfor the tree-type capacitors in the DRAM is complete.

Sixth Preferred Embodiment

A sixth embodiment of the invention is illustrated in FIGS. 7A and 7B.In this embodiment also, the trunk-like part of each tree-like storageelectrode is hollow. The tree-type capacitors of the sixth embodimentare based on the structure of FIG. 5C. Elements in FIGS. 7A and 7B thatare identical to those in FIG. 5C are labeled with the same numerals.

Referring first to FIG. 7A together with FIG. 5C, after the fabricationhas reached the stage shown in FIG. 5C, conventional photolithographicand etching processes are used to etch away selected parts of theinsulating layer 84, the polysilicon layers 82a, 82b, and the insulatinglayer 80, so as to form contact holes 90a, 90b which extend downwardfrom the top surface of the insulating layer 84 to the top surfaces ofthe T-shaped elements 74a, 74b of the storage electrodes. Next, the CVDmethod is used to deposit a polysilicon layer which is then etched backso as to form sidewall spacers 92a, 92b on the inner walls of thecontact holes 90a, 90b. The sidewall spacers 92a, 92b constitute uppertrunk-like parts of the tree-like storage electrodes, and are hollowwith U-shaped cross sections, which provides the storage electrode withincreased surface area.

Referring next to FIG. 7B, in the subsequent step wet etching isperformed on the wafer, with the etching protection layer 72 as the etchend point, so as to remove the insulating layers 84, 80 and theinsulating pillar 78. This completes the fabrication for the storageelectrodes of the tree-type capacitors in the DRAM. The embodimentdiffers from that of FIG. 5D in that the upper part of each trunk-likeelectrode is hollow, and has a U-shaped cross section. A dielectric filmand opposing polysilicon electrode may now be formed as describedpreviously for the first, second and third embodiments. After that, thefabrication for the tree-type capacitors in the DRAM is complete.

Seventh Preferred Embodiment

In the foregoing six embodiments, the branch-like part of the tree-likestorage electrode is L-shaped in cross section, so that it is crooked,with two straight segments. However, the invention is not limited tosuch a structure. The number of straight segments can be increased tothree or more. The following description, with reference to FIGS. 8A and8F, is of a seventh embodiment in which the branch-like part of eachtree-like storage electrode is crooked, with four straight segments.

The tree-type capacitors of the seventh embodiment are based on thestructure of FIG. 2A. Elements in FIGS. 8A through 8F that are identicalto those in FIG. 2A are labeled with the same numerals.

Referring first to FIG. 8A together with FIG. 2A, after the fabricationhas reached the stage shown FIG. 2A, the CVD method is used to deposit aplanarization insulating layer 100 of, for example, BPSG. Then the samemethod is used to deposit an etching protection layer, which can be, forexample, a silicon nitride layer 102. A thick insulating layer of, forexample, silicon dioxide, is then deposited over the wafer. After that,a conventional photolithographic process is used to form a photoresistlayer 106 and then anisotropic etching is performed on the exposedsilicon dioxide layer, so as to form protruding insulating layers 104and an underlying insulated layer 103.

Referring next to FIG. 8B, in the subsequent step a photoresist erosiontechnique is performed to erode away part of the photoresist layer 106,so as to form a photoresist layer 106a that is reduced both in breadthand thickness (height). Part of the surface of the protruding insulatinglayers 104 formerly underlying the uneroded photoresist layer 106 isthereby exposed.

Referring next to FIG. 8C, in the subsequent step anisotropic etching isperformed on the exposed surface of the protruding insulating layers 104and the underlying insulating layer 103, until the silicon nitride layer102, which serves as etching protection layer, is exposed. Protrudinginsulating layers 104a with stair-like sidewalls are thus formed. Afterthat, the photoresist layer is removed.

Referring next to FIG. 8D, the subsequent steps are the same as thoseshown in FIGS. 2C and 2D in which the CVD method is used successively toform a first insulating layer 108, a polysilicon layer, and a secondinsulating layer 112, and then the CMP technique is applied to thesurface of the wafer so as to polish away an upper part of thepolysilicon layer. The remaining part of the polysilicon layer thusincludes a number of separate sections designated by the numerals 110a,110b.

Referring next to FIG. 8E, in the subsequent step conventionalphotolithographic and etching processes are used to etch awaysuccessively selected parts of the insulating layer 112, the polysiliconlayers 110a, 110b, the insulating layer 108, the silicon nitride layer102, the planarization insulating layer 100, and the gate oxidation film14, so as to form storage electrode contact holes 114a, 114b whichextend from the top surface of the insulating layer 112 to the topsurface of the drain regions 16a and 16b. After that, the storageelectrode contact holes 114a, 114b are refilled with polysilicon layers116a, 116b by first using the CVD method to deposit a polysilicon layer,and then etching back part of the polysilicon layer.

Referring next to FIG. 8F, in the subsequent step, wet etching isperformed on the wafer, with the silicon nitride layer 102 as the etchend point, so as to remove the insulating layers 112, 108 of silicondioxide and the insulating pillar 104a. This completes the fabricationof the storage electrodes of the tree-type capacitors in the DRAM. Adielectric film and opposing polysilicon electrode may now be formed asdescribed previously for the first, second and third embodiments. Afterthat, the fabrication for the tree-type capacitors in the DRAM iscomplete.

As illustrated in FIG. 8F, the storage electrodes of the tree-typecapacitors include trunk-like polysilicon layers 116a, 116b andbranch-like polysilicon layers 110a, 110b which are each crooked, withfour straight segments. The trunk-like polysilicon layers 116a, 116b areelectrically coupled to the drain regions 16a and 16b of the transfertransistor in the DRAM. The bottom-most, horizontal segments of thebranch-like polysilicon layers 110a, 110b are in contact with thetrunk-like polysilicon layers 116a, 116b.

The insulating pillars or protruding insulating layers of thisembodiment are modified in shape so as to form the branch-likepolysilicon layers with increased area for charge storage. However, theparticular shapes of the insulating pillars and protruding insulatinglayers are not limited to those disclosed. Thus, referring to FIG. 2B,for example, isotropic etching or wet etching can be used instead ofanisotropic etching to etch away part of the thick insulating layer.This permits the formation of near triangular-shaped insulating layersinstead of the rectangular ones shown. In addition, also referring toFIG. 2B, after the insulating pillar 24 is formed, sidewall insulatinglayers can be formed on the sidewalls of the insulating pillar 24, so asto form insulating pillars of different shape. Therefore, thebranch-like polysilicon layers can be modified into various shapes.

If it is desired to fabricate the branch-like polysilicon layers with anincreased number of straight segments, the wafer structure of FIGS. 8Band 8C can be used as the base and subsequently, the photoresist erosiontechnique and anisotropic etching can be used repeatedly to form theprotruding insulating layers with an increased number of step-likesegments.

Eighth Preferred Embodiment

In the foregoing seven embodiments, the CMP technique is used to dividea single layer of polysilicon into separate sections used respectivelyto form individual storage electrodes. However, the invention is notlimited to the use of the CMP technique for that purpose. Instead,according to an eighth embodiment of the invention illustrated in FIGS.9A through 9D, conventional photolithographic and etching processes canbe substituted for the CMP method, for dividing the single layer ofpolysilicon into the separate sections.

The tree-type capacitor of the eighth embodiment is based on thestructure of FIG. 3A. Elements in FIGS. 9A through 9D that are identicalto those in FIG. 3A are labeled with the same numerals.

Referring first to FIG. 9A together with FIG. 3A, after the fabricationhas reached the stage shown in FIG. 3A, the topmost layer of silicondioxide 48 is etched away or polished by the CMP technique, until thetopmost polysilicon layer 46 is exposed. The resultant wafer structureis shown in FIG. 9A.

Referring next to FIG. 9B, a conventional photolithographic process isused to form a photoresist layer 120. After that, anisotropic etching isperformed successively on the exposed parts of the polysilicon layer 46,the silicon dioxide layer 44, and the polysilicon layer 42. By suchetching, the polysilicon layers 42, 46 are divided into a number ofseparate sections designated by the numerals 42c, 42d, and 46c, 46d.

Referring next to FIG. 9C, conventional photolithographic and etchingprocesses are then applied to form storage electrode contact holes 122a,122b which extend from the top surface of the insulating layer 48 to thetop surface of the drain regions 16a and 16b. Next, the storageelectrode contact holes 122a, 122b are refilled with polysilicon layers124a, 124b, by first using the CVD method to deposit a polysilicon layerand then etching back part of the polysilicon layer.

Referring next to FIG. 9D, in the subsequent step wet etching isperformed on the wafer, with the etching protection layer 22 as the etchend point, so as to remove the insulating layers 40, 44, 48 of silicondioxide and the insulating pillar 24. This completes the fabrication ofthe storage electrodes of the tree-type capacitors. A dielectric filmand opposing polysilicon electrode may now be formed as describedpreviously for the first, second and third embodiments. After that, thefabrication for the tree-type capacitors in the DRAM is complete.

These electrodes are composed of trunk-like polysilicon layers 124a,124b and branch-like polysilicon layers 42c, 46c and 42d, 46d, eachconsisting of three straight segments. The trunk-like polysilicon layers124a, 124b are electrically coupled respectively to the drain regions16a and 16b of the transfer transistors in the DRAM. The branch-likepolysilicon layers 42c, 46c and 42d, 46d have their respectivebottom-most, horizontal segments in contact with the trunk-likepolysilicon layers 50a, 50b.

Ninth Preferred Embodiment

In the foregoing first through seventh embodiments, the branch-likepolysilicon layers have their topmost segments aligned substantially inthe same horizontal plane; and in the eighth embodiment, the branch-likepolysilicon layers have their topmost segments aligned substantially inthe same vertical plane. However, the invention is not limited to suchstructures. Instead, according to a ninth embodiment of the inventionillustrated in FIGS. 10A through 10D, the topmost segments of thebranch-like polysilicon layers are not aligned.

The tree-type capacitor of the ninth embodiment is based on thestructure of FIG. 9A. Elements in FIGS. 10A through 10D that areidentical to those in FIG. 9A are labeled with the same numerals.

Referring first to FIG. 10A together with FIG. 9A, after the fabricationhas reached the stage shown in FIG. 9A, a conventional photolithographicprocess is used to form a photoresist layer 130 and anisotropic etchingis performed on the exposed parts of the polysilicon layer 46 and thesilicon dioxide layer 44. Through this process, the polysilicon layer 46is divided into a number of separate sections designated by the numerals46e, 46f.

Referring next to FIG. 10B, in the subsequent step the photoresisterosion technique is used to erode away part of the photoresist layer130, so as to form a photoresist layer 130a of reduced breadth andthickness. Part of the top surface of the polysilicon layers 46e, 46f isthus exposed. Then, anisotropic etching is performed on the exposedparts of the polysilicon layers 46e, 46f, and 42. Through this process,parts of the polysilicon layers 46e, 46f are further etched away,thereby forming polysilicon layers 46g, 46h of reduced size. After that,anisotropic etching is again performed on the exposed parts of thesilicon dioxide layers 44, 40 until the topmost surfaces of thepolysilicon layers 42g, 42h are exposed. The photoresist layer is thenremoved.

Referring next to FIG. 10C, in the subsequent step conventionalphotolithographic and etching processes are used to form storageelectrode contact holes 132a, 132b which extend from the top surface ofthe insulating layer 48 to the top surfaces of the drain regions 16a and16b. Then, the storage electrode contact holes 132a, 132b are refilledwith polysilicon layers 134a, 134b, by first using the CVD method todeposit a polysilicon layer, and then etching back part of thepolysilicon layer.

Referring finally to FIG. 10D, in the subsequent step, wet etching isperformed on the wafer, with the etching protection layer 22 as the etchend point, so as to remove the insulating layers 40, 44, 48 of silicondioxide and the insulating pillar 24. This completes the fabrication ofthe storage electrodes of the tree-type capacitors in the DRAM. Adielectric film and opposing polysilicon electrode may now be formed asdescribed previously for the first, second and third embodiments. Afterthat, the fabrication for the tree-type capacitors in the DRAM iscomplete.

The storage electrodes include trunk-like polysilicon layers 134a, 134band branch-like polysilicon layers 42g, 46g and 42h, 46h having L-shapedcross sections. The trunk-like polysilicon layers 134a, 134b areelectrically coupled respectively to the drain region 16a and the drainregion 16b, of the transfer transistors in the DRAM. The branch-likepolysilicon layers 42g, 46g and 42h, 46h have bottom-most, horizontalsegments in respective contact with the trunk-like polysilicon layers134a, 134b, and the substantially vertical segments of the branch-likepolysilicon layers 46g, 46h are more elevated than that of thebranch-like polysilicon layers 42g, 42h.

It will be apparent to those skilled in the art of semiconductorfabrication that the foregoing disclosed embodiments can be appliedeither alone or in combination so as to provide storage electrodes ofvarious sizes and shapes on a single DRAM chip.

These variations are all within the scope of the invention.

Although in the accompanying drawings the embodiments of the drains ofthe transfer transistors are based on diffusion areas in a siliconsubstrate, other variations, for example trench type drain regions, arepossible.

Elements in the accompanying drawings are schematic diagrams fordemonstrative purpose and not depicted in the actual scale. Thedimensions of the elements of the invention as shown should by no meansbe considered limitations on the scope of the invention.

While the invention has been described by way of example and in terms ofpreferred embodiments, it is to be understood that the invention is notlimited to the disclosed embodiments. To the contrary, it is intended tocover various modifications and similar arrangements as would beapparent to those skilled in the art. Therefore, the scope of theappended claims, which define the invention, should be accorded thebroadest interpretation so as to encompass all such modifications andsimilar structures.

What is claimed is:
 1. A method for fabricating a semiconductor memory device including a substrate, a transfer transistor having source/drain regions, formed in the substrate, and a charge storage capacitor electrically coupled to one of the source/drain regions, said method comprising the steps of:(1) forming a first insulating layer over the substrate, the first insulating layer covering the transfer transistor, and forming an etching protection layer over the first insulating layer; (2) forming an insulating pillar over the first insulating layer, the insulating pillar defining recess areas on either side thereon, includingforming a thick insulating layer over the etching protection layer; forming a photoresist layer over the thick insulating layer, such that a first portion of the thick insulating layer is exposed; etching away part of the exposed first portion of the thick insulating layer to form the recess in the first exposed portion; eroding away a selected part of the photoresist layer so as to further expose a second portion of the thick insulating layer; and etching the exposed second portion and further etching the exposed first portion until the etching protection layer is exposed in the recess and so as to form the insulating pillar with a crooked cross section; (3) forming a first conductive layer over the insulating pillar, and over the first insulating layer in the recess areas; (4) removing parts of the first conductive layer leaving a plurality of first conductive layer sections; (5) forming a second conductive layer in a recess area, which penetrates at least through the first conductive layer and the first insulating layer, so as to be electrically coupled to one of the source/drain regions, the second conductive layer forming a base conductive layer, and the first conductive layer forming a branching conductive layer substantially L-shaped in cross section, the L-shaped cross section having one end connected to the base conductive layer, wherein the first conductive layer and the second conductive layer in combination form a storage electrode for the charge storage capacitor; (6) removing the insulating pillar; (7) forming a dielectric layer over the first and second conductive layers; and (8) forming a third conductive layer over the dielectric layer, the third conductive layer serving as an opposing electrode of the charge storage capacitor.
 2. A method as claimed in claim 1, wherein said step (4) includes the step of etching away the selected part of the first conductive layer that lies above the insulating pillar.
 3. A method as claimed in claim 1, wherein said step (4) includes the step of performing chemical mechanical polishing so as to polish away the selected part of the first conductive layer that lies above the insulating pillar.
 4. A method as claimed in claim 1, further comprising, between said step (3) and said step (4) the step of forming a second insulating layer over the first conductive layer, such that the second insulating layer substantially fills up the recess area; andwherein said step (5) includes the step of forming the second conductive layer to penetrate through the second insulating layer; and wherein said step (6) includes the step of removing the second insulating layer.
 5. A method as claimed in claim 1, further comprising, between said step (3) and said step (4), the steps of:forming alternately at least a first film of insulating material and a second film of conductive material, over the first conductive layer; and forming a second insulating layer over the second film, so as to substantially fill up the recess; wherein said step (4) further includes the step of removing a selected upper part of the second film that lies above the insulating pillar; wherein said step (5) further includes the step of forming the second conductive layer to penetrate successively through the second insulating layer, the second film, and the first film; and wherein said step (6) further includes the step of removing the second insulating layer and the first film.
 6. A method as claimed in claim 1, wherein said step (5) further includes the step of forming the second conductive layer with a substantially U-shaped cross section.
 7. A method as claimed in claim 1, wherein the recess area is bounded at a bottom thereof by the etching protection layer, the insulating pillar being formed on the etching protection layer.
 8. A method as claimed in claim 1, further comprising, between said step (3) and said step (4) the step of forming a second insulating layer over the first conductive layer, the second insulating layer substantially filling up the recess area;wherein said step (5) includes forming the second conductive layer so as to penetrate through the second insulating layer; and wherein said step (6) includes removing the second insulating layer.
 9. A method for fabricating a semiconductor memory device including a substrate, a transfer transistor having source/drain regions, formed on the substrate, and a charge storage capacitor electrically coupled to one of the source/drain regions, said method comprising the steps of:(1) forming a first insulating layer over the substrate, the first insulating layer covering the transfer transistor; (2) forming an insulating pillar over the first insulating layer, the insulating pillar defining recess areas on either side thereof; (3) forming alternately a first film of insulating material and a second film of conductive material over the first insulating layer in a recess area and over the insulating pillar; (4) removing a selected part of the second film that lies above the insulating pillar; (5) forming a first conductive layer which penetrates at least through the second film, the first film, and the first insulating layer so as to be electrically coupled to one of the source/drain regions, wherein the first conductive layer and the second film in combination form a storage electrode of the charge storage capacitor; (6) removing the insulating pillar and the first film; (7) forming a dielectric layer over exposed surfaces of the first conductive layer and the second film; and (8) forming a second conductive layer over the dielectric layer, the second conductive layer serving as an opposing electrode of the charge storage capacitor; wherein the first conductive layer forms a base conductive layer and the second film forms a branching conductive layer substantially L-shaped in cross section, the branching conductive layer having one end connected to the base conductive layer.
 10. A method as claimed in claim 9, wherein said step (4) includes the step of etching away the selected part of the second film that lies above the insulating pillar.
 11. A method as claimed in claim 9, wherein said step (4) includes the step of using chemical mechanical polishing to polish away the selected part of the second film that lies above the insulating pillar.
 12. A method as claimed in claim 9, further comprising, between said step (3) and said step (4), the step of forming a second insulating layer over the second film, such that the second insulating layer substantially fills up the recess area;wherein said step (5) includes the step of forming the first conductive layer so as to penetrate through the second insulating layer; and said step (6) includes the step of removing the second insulating layer.
 13. A method as claimed in claim 9, further comprising, between said steps (1) and (2), a step of forming an etching protection layer over the first insulating layer; andwherein said step (2) further includes the steps of:forming a thick insulating layer over the etching protection layer; forming a photoresist layer over the thick insulating layer, such that the recess area is exposed; removing an exposed part of the thick insulating layer in the recess area; eroding away part of the photoresist layer so as to expose a further part of the thick insulating layer; removing the further exposed part of the thick insulating layer to expose the etching protection layer, so as to form the insulating pillar with a crooked cross section; and removing the photoresist layer.
 14. A method as claimed in claim 13, wherein said step (4) includes the step of etching away the selected part of the second film that lies above the insulating pillar.
 15. A method as claimed in claim 13, wherein said step (4) includes the step of using chemical mechanical polishing to polish away the selected part of the second film that lies above the insulating pillar.
 16. A method as claimed in claim 13, further comprising, between said step (3) and said step (4), the step of forming a second insulating layer over the second film such that the second insulating layer substantially fills up the recess area;wherein said step (5) includes the step of forming the first conductive layer so as to penetrate through the second insulating layer; and wherein said step (6) includes the step of removing the second insulating layer.
 17. A method as claimed in claim 13, wherein said step (5) further includes the step of forming the first conductive layer with a substantially U-shaped cross section. 